Both planar thin film and channel optical waveguides have been integrated with charge-coupled devices (CCDs). Coupling of light from the waveguide region to the detector elements utilizes a smooth and uniformly-tapered region of SiO2 to minimize scattering. CCd transfer inefficiency of 1.0 times ten to the minus fourth power is consistently obtained for a number of devices. A channel waveguide array formed in a fan-out pattern is introduced as a means of enhancing focal plane resolution in integrated optical devices using optical waveguide lenses. High spatial resolution can thus be obtained without making detector spacings too small, thus avoiding detector problems with regard to fabrication, crosstalk, linearity, and charge transfer inefficiency. Operation of an integrated optical channel waveguide array-CCD transversal filter is reported. Channel waveguides formed in V-grooves couple directly to the sensor elements of the four phase, double polysilicon CCD. Experimental results include a filter transfer function having good agreement with theoretical results. The voltage contrast mode of a scanning electron microscope (SEM) is utilized to observe charge-coupled devices (CCDs) which have been cross sectioned. A new cross sectioning technique which uses anisotropic etching to accurately define the axis along which fracture occurs is presented.

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